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| BAV70 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) Fast switching dual diode with common cathode This diode is also available in other configurations including: a dual anode to cathode with type designation BAV99, a dual common anode with type designation BAW56, and a single diode with type designation BAL99. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) Marking JJ 3 Top View 1 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings for a single diode at 25 C ambient temperature unless otherwise specified. Symbol Reverse Voltage, Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1 s at t = 1 ms at t = 1 s Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 70 250 2 1 0.5 3501) 150 -65 to +150 Unit V mA A A A mW C C VR, VRM IF IFSM IFSM IFSM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BAV70 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 C at VR = 25 V, Tj = 150 C Capacitance at VF = VR = 0, f = 1 MHz Reverse Recovery Time from IF = 10 mA to IR = 10 mA measured at IR = 1 mA, RL = 100 Thermal Resistance Junction to Ambient Air 1) Min. - - - - - - - - - Typ. - - - - - - - - - Max. 0.715 0.855 1.0 1.25 2.5 100 30 1.5 6 Unit V V V V A A A pF ns VF VF VF VF IR IR IR Ctot trr RthJA - - 4301) K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) |
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